IRF223 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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IRF223 Datasheet PDF : 3 Pages
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Absolute Maximum Ratings Tc = 25°c, Unless otNsrwise Specified
IRF220
Drain to Source Voltage (Note 1 )
....
Vn<?
200
Drain to Gate Voltage (RQS = 20kfl) (Note 1 )
Continuous Drain Current
T c = 100°C
Pulsed Drain Current (Note 3)
200
ln
5.0
In
3.0
20
Gate to Source Voltage
Maximum Power Dissipation . . .
Linear Derating Factor
Vpc
±20
Pn
40
0.32
Single Pulse Avalanche Rating. .
Operating and Storage Temperature . . . .
EA<;
85
-55 to 150
Maximum Temperature for Soldering
Leads at 0 063in (1 6mm) from Case for 10s
Ti
300
Packaae Bodv for 10s. See Techbrief 334 . . . .
260
IRF221
150
150
5.0
3.0
20
±20
40
0.32
85
-55 to 150
300
260
IRF222
200
200
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
IRF223
150
150
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/°C
mJ
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
WIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF220, IRF222
BVDSs ID = 250uA, VGS = OV, (Figure 10)
200 _
V
IRF221.IRF223
150 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH) VDS = VGS.ID =2^A
2.0
-
4.0
V
toss VDS = Rated BVDSS, VGS = OV
-
-
25 uA
VDS = 0-8 x Rated BVDSS, VGS = OV, Tj = 125°C -
-
250 uA
On-State Drain Current (Note 2)
IRF220, IRF221
'D(ON) VDS > lD(ON)x rDS(ON)MAX. VGS = 10V
5.0 -
_
A
IRF222, IRF223
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF220, IRF221
'GSS VGS = ±2ov
rDS(ON) ID = 2.5A, VGS = 1°V, (Figure 8)
4.0 -
-
A
-
- ±100 nA
- 0.5 0.8 n
IRF222, IRF223
- 0.8 1.2 £1
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain "Miller" Charge
9fs VDS > !D(ON) x rDS(ON)MAX. ]D = 2.5A
1.3 2.5 -
S
'd(ON) VDD = 0.5 x Rated BVDSS, ID = 2.5A, RG = 50£i -
For IRF220, 222 RL = 80£i
tr
For IRF221. 223 RL = 6011
-
(Figures 17, 18) MOSFET Switching Times are
td(OFF) Essentially Independent of Operating
-
Temperature
tf
-
20 40
ns
30 60 ns
50 100 ns
30 60 ns
Q9(TOT) VGS = 1°V, ID= 6-OA. VDS = °-8 x Rated BVDss -
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
11 15 nC
Charge is Essentially Independent of Operating
Qgs Temperature
-
5.0
-
nC
Qgd
-
6.0
-
nC
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