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Fabricante

23A1024

1Mbit SPI Serial SRAM with SDI and SQI Interface

Microchip Technology 

23A1024/23LC1024

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (†)

VCC.............................................................................................................................................................................6.5V

All Inputs and Outputs w.r.t. VSS ........................................................................................................ -0.3V to VCC +0.3V

Storage Temperature...............................................................................................................................-65°C to +150°C

Ambient Temperature under Bias............................................................................................................-40°C to +125°C

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

TABLE 1-1: DC CHARACTERISTICS

DC CHARACTERISTICS

Industrial (I): TA = -40°C to +85°C

Automotive (E): TA = -40°C to +125°C

Param.

No.

Sym.

Characteristic

Min. Typ.(3) Max. Units

Test Conditions

D001

VCC Supply Voltage

1.7

—

2.2

V 23A1024

2.5

5.5

V 23LC1024

D002

VIH High-level Input

Voltage

0.7VCC — VCC + 0.3 V

D003

VIL Low-level Input

Voltage

-0.3

— 0.2 VCC V 23A1024

0.1 VCC V 23LC1024

D004

VOL Low-level Output

Voltage

—

—

0.2

V IOL = 1 mA

D005

VOH High-level Output VCC - 0.5 —

—

V IOH = -400 A

Voltage

D006

ILI Input Leakage

Current

—

—

±1

A CS = VCC, VIN = VSS OR VCC

D007

ILO Output Leakage

Current

—

—

±1

A CS = VCC, VOUT = VSS OR VCC

D008 ICC Read Operating Current

—

1

10

mA FCLK = 20 MHz; SO = O, 2.2V

3

10

mA FCLK = 20 MHz; SO = O, 5.5V

D009

ICCS Standby Current

—

1

4

A CS = VCC = 2.2V, Inputs tied to

VCC or VSS, I-Temp

—

12

A CS = VCC = 2.2V, Inputs tied to

VCC or VSS, E-Temp

4

10

A CS = VCC = 5.5V, Inputs tied to

VCC or VSS, I-Temp

—

20

A CS = VCC = 5.5V, Inputs tied to

VCC or VSS, E-Temp

D010

CINT Input Capacitance

—

—

7

pF VCC = 5.0V, f = 1 MHz, TA = 25°C

(Note 1)

D011

VDR RAM Data Retention

—

1.0

—

V (Note 2)

Voltage

Note 1: This parameter is periodically sampled and not 100% tested.

2: This is the limit to which VCC can be lowered without losing RAM data. This parameter is periodically

sampled and not 100% tested.

3: Typical measurements taken at room temperature.

DS20005142C-page 2

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