29F010 Ver la hoja de datos (PDF) - STMicroelectronics
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29F010 Datasheet PDF : 20 Pages
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M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
■ SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45 ns
■ PROGRAMMING TIME
– 8 µs per Byte typical
■ 8 UNIFORM 16 KBytes MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 20h
■ ECOPACK® PACKAGES AVAILABLE
PLCC32 (K)
TSOP32 (N)
8 x 20mm
Figure 1. Logic Diagram
VCC
17
A0-A16
W
E
G
M29F010B
8
DQ0-DQ7
VSS
AI02735
September 2005
1/20
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