IRFS4310Z Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

IRFS4310Z

Advanced Process Technology

Kersemi Electronic Co., Ltd. 

AUIRFS4310Z

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

+

‚

-



RG

ƒ

Circuit Layout Considerations

 Low Stray Inductance

Ground Plane

-

Low Leakage Inductance

Current Transformer

D.U.T. ISD Waveform

Reverse

-„ +

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

*

dv/dt controlled by RG

Driver same type as D.U.T.

VDD

Re-Applied

** + Voltage

Body Diode Forward Drop

ISD controlled by Duty Factor "D"

-

D.U.T. - Device Under Test

Inductor Curent

Ripple  5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

V*G*S*=10V

VDD

ISD

Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

V(BR)DSS

15V

tp

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01

+

- VDD

A

Fig 22a. Unclamped Inductive Test Circuit

IAS

Fig 22b. Unclamped Inductive Waveforms

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width µs

Duty Factor 

+-V D D

Fig 23a. Switching Time Test Circuit

L

VCC

DUT

0

210K

S

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 23b. Switching Time Waveforms

Id

Vds

Vgs

Vgs(th)

Fig 24a. Gate Charge Test Circuit

2014-8-27

8

Qgodr

Qgd Qgs2 Qgs1

Fig 24b. Gate Charge Waveform

www.kersemi.com

Share Link: