IRFS4310Z Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
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IRFS4310Z Datasheet PDF : 10 Pages
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AUIRFS4310Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100 ––– ––– V VGS = 0V, ID = 250μA
g ––– 0.11 ––– V/°C Reference to 25°C, ID = 5mA
––– 4.8 6.0 m VGS = 10V, ID = 75A
2.0 ––– 4.0
V VDS = VGS, ID = 150μA
gfs
Forward Transconductance
RG
Internal Gate Resistance
150 ––– –––
––– 0.7 –––
S VDS = 50V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 100V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
––– 120 170
––– 29 –––
––– 35 –––
––– 85 –––
––– 20 –––
nC ID = 75A
g VDS =50V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
ns VDD = 65V
tr
Rise Time
––– 60 –––
ID = 75A
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 55 –––
––– 57 –––
g RG = 2.7
VGS = 10V
Ciss
Input Capacitance
––– 6860 ––– pF VGS = 0V
Coss
Output Capacitance
––– 490 –––
VDS = 50V
Crss
Reverse Transfer Capacitance
––– 220 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 570 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 920 –––
ƒ = 1.0MHz, See Fig. 5
i VGS = 0V, VDS = 0V to 80V , See Fig. 11
h VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 127
A MOSFET symbol
D
showing the
––– ––– 560 A integral reverse
G
––– ––– 1.3
p-n junction diode.
S
g V TJ = 25°C, IS = 75A, VGS = 0V
––– 40 ––– ns TJ = 25°C
VR = 85V,
––– 49 –––
TJ = 125°C
––– 58 ––– nC TJ = 25°C
g IF = 75A
di/dt = 100A/μs
––– 89 –––
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-27
2
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