MT16VDDF12864HG-40B Ver la hoja de datos (PDF) - Micron Technology

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componentes Descripción

Fabricante

MT16VDDF12864HG-40B

DDR SDRAM SODIMM

Micron Technology 

512MB, 1GB (x64, DR) 200-Pin DDR SODIMM

Features

Table 4:

Part Numbers and Timing Parameters – 1GB

Base device: MT46V64M8,1 512Mb DDR SDRAM

Part Number2

MT16VDDF12864HG-40B__

MT16VDDF12864HY-40B__

MT16VDDF12864(L)HG-335__

MT16VDDF12864HI-335__

MT16VDDF12864H(I)Y-335__

MT16VDDF12864HG-265__

MT16VDDF12864HY-265__

Module

Density

1GB

1GB

1GB

1GB

1GB

1GB

1GB

Configuration

128 Meg x 64

128 Meg x 64

128 Meg x 64

128 Meg x 64

128 Meg x 64

128 Meg x 64

128 Meg x 64

Module

Bandwidth

3.2 GB/s

3.2 GB/s

2.7 GB/s

2.7 GB/s

2.7 GB/s

2.1 GB/s

2.1 GB/s

Memory Clock/

Data Rate

5.0ns/400 MT/s

5.0ns/400 MT/s

6.0ns/333 MT/s

6.0ns/333 MT/s

6.0ns/333 MT/s

7.5ns/266 MT/s

7.5ns/266 MT/s

Clock Cycles

(CL-tRCD-tRP)

3-3-3

3-3-3

2.5-3-3

2.5-3-3

2.5-3-3

2.5-3-3

2.5-3-3

Notes:

1. Data sheets for the base devices can be found on Micron’s Web site.

2. All part numbers end with a two-place code (not shown) that designates component and

PCB revisions. Consult factory for current revision codes.

Example: MT16VDDF12864HY-335F2.

PDF: 09005aef80a77a90/Source: 09005aef80a646bc

DDF16C64_128x64_L_H.fm - Rev. G 8/08 EN

3

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc. All rights reserved

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