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1SZ1180A Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd

Número de pieza
componentes Descripción
Fabricante
1SZ1180A
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
1SZ1180A Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
FIG1: Maximum Continuous Power Dissipation
1.0
0.75
0.5
0.25
0
25 50 75 100 125 150 175
T(℃)
FIG3: Typical Temperature Coefficients
110
90
70
50
Tested at rated IZT
30
10
0
0 10 20 30 40 50 60 70 80 90 100
VZ(V)
FIG5:Typical Reverse Characteristics
10
1000
FIG2:Typical Zener Impedance
TJ=25
100
VZ=91V
VZ=56V
VZ=30V
10
1
0.5
VZ=6.2V
10
100
500
IZT(mA)
FIG4:Typical Instantaneous Forward Characteristics
for SMA4763A
10
1
0.1
0.01
0.4 0.6
Pulse width = 300μs
1% Duty Cycle
TJ=25
0.8 1.0 1.2 1.4 1.6
VF(V)
1.0
TJ=100
0.1
0.01
0
TJ=25
20
40
60
80
100
VZ(%)
High Diode Semiconductor
3

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