MUBW30-12A6 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MUBW30-12A6 Datasheet PDF : 8 Pages
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Output Inverter T1 - T6, D1 - D6
Symbol
VCES
VCGR
VGE
IC
ICM
tSC
Ptot
TVJ
TVJ
Conditions
TVJ = 25°C
TVJ = 25°C; RGE = 20kW
TVJ = 25°C
TC = 25°C
TC = 90°C
tp = 1 ms = 1% duty cycle; TC = 25°C
TC = 90°C
VCE = 600 V; TVJ = 125°C
non-repetitive
TC = 25°C
Free-Wheeling Diode
IGBT
Maximum Ratings
1200
V
1200
V
±20
V
31
A
17
A
62
A
34
A
10
µs
104
W
+150
°C
+150
°C
Symbol
ICES
IGES
VGE(th)
V
(BR)CES
VCEsat
tf
tr
td(on)
td(off)
Eoff
Eon
Ciss
Coss
Crss
gfs
Qg
VF
trr
Q
r
I
r
RthJC
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGE = 0 V; VCE = 1200 V
VCE = 0 V; VGE = 25 V
VGE = VCE; IC = 0.35 mA
V
GE
=
0
V;
I
C
=
10
mA;
TVJ
=
-55°C
VGE = 15 V; IC = 15 A; TVJ = 25°C
TVJ = 150°C
Inductive load, TVJ = 125°C
VCC = 600 V; IC = 17.5 A
RG = 100 W; VGE = ±15 V
4.5
1200
600 1000 µA
100 nA
6.5 V
V
2.2 2.6 V
2.5 3.0 V
150
ns
70
ns
80
ns
580
ns
1.2
mJ
3.0
mJ
VGE = 0 V
V = 25 V
CE
f = 1 MHz
1000
pF
200
pF
80
pF
VCE = 20 V; IC = 1.5 A
VCC = 800 V; IC = 6 A pulse; VGE = 15 V
IF = 12 A; VGE = 0 V; TVJ = 25°C
TVJ = 100°C
IF = 12 A; VGE = 0 V; TVJ = 100°C
VR = -500 V; diF/dt = -1000 A/µs
I
F
=
12
A;
V
GE
=
0
V;
TVJ
=
100°C
VR = -500 VdiF/dt = -1000 A/µs
tbd
S
108
nC
2.2 2.75 V
1.8
V
80
ns
2.2
µC
250 µA
IGBT
Diode
(per die)
(per die)
1.0
°C/W
1.5
°C/W
© 2000 IXYS All rights reserved
MUBW 30-12 A6
2-8
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