VUO122-12NO7_ Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
VUO122-12NO7_ Datasheet PDF : 5 Pages
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Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 1200 V
VR = 1200 V
IF = 50 A
IF = 150 A
IF = 50 A
IF = 150 A
TC = 115°C
rectangular
d =⅓
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ
junction capacitance
VR = 400 V; f = 1 MHz
VUO122-12NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max. Unit
1300 V
1200 V
100 µA
2 mA
1.13 V
1.47 V
1.05 V
1.49 V
125 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.80 V
4.6 mΩ
0.6 K/W
0.3
K/W
205 W
1.00 kA
1.08 kA
850 A
920 A
5.00 kA²s
4.85 kA²s
3.62 kA²s
3.52 kA²s
35
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
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