2N4919G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N4919G Datasheet PDF : 5 Pages
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2N4918 − 2N4920* Series
TYPICAL DC CHARACTERISTICS
1000
700
500
300
TJ = 150°C
200
25°C
100
70
−55 °C
50
30
20
VCE = 1.0 V
1.0
IC = 0.1 A 0.25 A 0.5 A
1.0 A
0.8
0.6
TJ = 25°C
0.4
0.2
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
108
IC = 10 ICES
VCE = 30 V
107
106
IC ≈ ICES
105
IC = 2x ICES
ICES VALUES
104
OBTAINED FROM
FIGURE 13
103
0
30
60
90
120
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base−Emitter Resistance
1.5
1.2
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
102
101
TJ = 150°C
100
10−1
100°C
10− 2
104
103 REVERSE
−0.2 −0.1
IC = ICES
25°C
FORWARD
0
+0.1 +0.2
VCE = 30 V
+0.3 +0.4 +0.5
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
+2.5
+2.0
+1.5
*APPLIES FOR IC/IB <
hFE @ VCE
2
+
1.0 V
+1.0
TJ = 100°C to 150°C
+0.5
*qVC FOR VCE(sat)
0
TJ = −55°C to +100°C
−0.5
−1.0
−1.5
−2.0
qVB FOR VBE
−2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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