MJ2501 Ver la hoja de datos (PDF) - Motorola => Freescale
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MJ2501
Motorola => Freescale
MJ2501 Datasheet PDF : 4 Pages
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJ2500 MJ2501 MJ3000 MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Breakdown Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 100 mAdc, IB = 0)
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VEB = 80 Vdc, RBE = 1.0 k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C)
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2500, MJ3000
MJ2501, MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 50 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v Base Emitter Voltage (IC = 5.0 Adc, VCE= 3.0 Vdc)
(1)Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(on)
Min
60
80
—
—
—
—
—
—
—
1000
—
—
—
Max
Unit
—
Vdc
—
mAdc
1.0
1.0
5.0
5.0
2.0
mAdc
1.0
mAdc
1.0
—
—
2.0
Vdc
4.0
3.0
Vdc
50,000
20,000
10,000
5000
TJ = 150°C
2000
25°C
1000
500
200
100
50
0.01 0.02
– 55°C
VCE = 3.0 Vdc
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
3.5
3.0
TJ = 25°C
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
1.0
VBE @ VCE = 3.0 V
0.5
VCE(sat) @ IC/IB = 250
0
0.01 0.02 0.05 0.1 0.2 0.5
1.0 2.0
5.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
3000
2000
1000
500
300
200
100
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
50
30
103
104
105
106
f, FREQUENCY (Hz)
Figure 3. Small–Signal Current Gain
10
7.0
5.0
3.0
SECONDARY BREAKDOWN LIMITED
2.0
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TJ = 200°C
MJ2500, MJ3000
MJ2501, MJ3001
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2
Motorola Bipolar Power Transistor Device Data
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