UPC2711T-E3 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPC2711T-E3 Datasheet PDF : 6 Pages
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3 GHz SILICON MMIC UPC2708T
WIDE-BAND AMPLIFIER UPC2711T
FEATURES
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY
20
15
UPC2708
UPC2711
10
5
0
0
0.5
1.0 1.5 2.0
2.5 3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
ICC
GS
fU
∆GS
PSAT
P1dB
NF
RLIN
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 - 2.6 GHz
f = 0.1 - 2.5 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
mA
dB
GHz
dB
dBm
dBm
dB
dB
RLOUT
ISOL
∆GT
RTH
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB
dB
dB/°C
°C/W
UPC2708T
T06
MIN
TYP MAX
20
26
33
13
15 18.5
2.7
2.9
±0.8
7.5
10
7.5
6.5
8
8
11
16
20
18
23
+0.002
200
UPC2711T
T06
MIN TYP MAX
9
12
15
11
13
16.5
2.7 2.9
±0.8
-2
1
-4
5
6.5
20
25
9
12
25
30
-0.002
200
California Eastern Laboratories
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