AS4LC4M4E0 Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS4LC4M4E0

4Mx4 CMOS DRAM (EDO) Family

Alliance Semiconductor 

AS4LC4M4E0

AS4LC4M4E1

®

Parameter

Power dissipation

Short circuit output current

Symbol

PD

Iout

Min

–

–

Max

0.5

50

Unit

W

mA

DC electrical characteristics

-50

Parameter

Symbol Test conditions

Min Max

Input leakage current IIL

0V ≤ Vin ≤ +VCC (max)

Pins not under test = 0V

-5 +5

Output leakage current IOL

Operating power

supply current

ICC1

DOUT disabled, 0V ≤ Vout ≤ +VCC (max) -5 +5

CAS, Address cycling; tRC = min

– 120

TTL standby power

supply current

ICC2

RAS = CAS ≥ VIH

– 2.0

Average power supply

current, RAS refresh

ICC3

mode or CBR

RAS cycling, CAS ≥ VIH,

tRC = min of RAS low after CAS low.

– 120

EDO page mode average

power supply current ICC4

CMOS standby power

supply current

ICC5

RAS = VIL, CAS,

address cycling: tHPC = min

RAS = CAS = VCC - 0.2V

– 90

– 1.0

Output voltage

VOH

VOL

CAS before RAS refresh

current

ICC6

IOUT = -2.0 mA

IOUT = 2.0 mA

RAS, CAS cycling, tRC = min

2.4 –

– 0.4

– 120

Self refresh current

RAS = CAS ≤ 0.2V,

ICC7

WE = OE ≥ VCC - 0.2V,

all other inputs at 0.2V or

VCC - 0.2V

– 0.6

-60

Min Max

-5 +5

-5 +5

– 110

– 2.0

– 110

– 80

– 1.0

2.4 –

– 0.4

– 110

– 0.6

Unit Notes

µA

µA

mA 1,2

mA

mA 1

mA 1, 2

mA

V

V

mA

mA

4/11/01; V.1.1

Alliance Semiconductor

P. 4 of 15

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