DMMT5551-7 Ver la hoja de datos (PDF) - Diodes Incorporated.
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DMMT5551-7 Datasheet PDF : 3 Pages
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DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available (DMMT5401)
· Ideal for Medium Power Amplification and Switching
· Intrinsically Matched NPN Pair (Note 1)
· 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
· 1% Matched Tolerance, Available (Note 2)
· Available in Lead Free/RoHS Compliant Version (Note 5)
A
BC
H
Mechanical Data
· Case: SOT-26
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Solderable per MIL-STD-202, Method 208
· Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 9, on Page 2
· Marking (See Page 2): K4R & K4T
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
K
M
J
DF
L
E1
E2
C2
C1
E1
C2
C1
B1
B2
DMMT5551
(K4R Marking Code)
B1
E2
B2
DMMT5551S
(K4T Marking Code)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
a 0° 8° ¾
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RqJA
Tj, TSTG
Value
180
160
6.0
200
300
417
-55 to +150
Notes:
1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
5. No purposefully added lead.
Unit
V
V
V
mA
mW
K/W
°C
DS30436 Rev. 4 - 2
1 of 3
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DMMT5551/DMMT5551S
ã Diodes Incorporated
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