IRF440 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
IRF440 Datasheet PDF : 5 Pages
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IRF440-443/IRF840-843
MTM7N45/7N50
N-Channel Power MOSFETs
8A, 450V/500V
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage1
IRF440/442/840/842
500
IRF441/443/842/843
450
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
IRF440-443
IRF840-843
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
2.0
Static Drain-Source On-Resistance 2
IRF440/441/840/841
IRF442/443/842/843
gfs
Forward Transconductance
4.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Tc=25℃, Figure 9, 10)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Symbol
Characteristic
Typ
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF440/441/840/841
IRF442/443/842/843
trr
Reverse Recovery Time
700
Notes
1. TJ=+25 ℃ to +150℃
2. Pulse test: Pulse width ≤80µs, Duty cycle ≤ 1%
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2
Max
Unit
V
Test Conditions
VGS=0V, ID=250µA
250
µA
100
µA
nA
±100
±500
VDS=Rated VDSS, VGS=0V
VDS=0.8 x Rated VDSS,
VGS=0V, Tc=125℃
VGS=±20V, VDS=0V
4.0
0.85
1.10
V
ID=250µA, VDS=VGS
Ω
VGS=10V, ID=4.0A
S( )
VDS=10V, ID=4.0A
1600
pF
350
pF
150
pF
VDS=25V, VGS=0V
f=1.0MHz
35
ns
VDD=220V, ID=4.0A
15
ns
VGS=10V, RGEN=4.7 Ω
90
ns
RGS=4.7 Ω
30
ns
60
nC
VGS=10V, ID=12A
VDD=400V
Max
Unit
Test Conditions
2.0
V
1.9
V
ns
IS=8.0A; VGS=0V
IS=7.0A; VGSA=0V
Is=8.0A; dIS/dt=100A/µs
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