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74VHCT04A Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
74VHCT04A
ON-Semiconductor
ON Semiconductor ON-Semiconductor
74VHCT04A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DC Electrical Characteristics
Symbol Parameter
VIH HIGH Level Input
Voltage
VCC (V)
4.5
5.5
Conditions
VIL LOW Level Input
4.5
Voltage
5.5
VOH HIGH Level Output
Voltage
4.5 VIN = VIH IOH = –50µA
IOH = –8mA
VOL LOW Level Output
Voltage
4.5 VIN = VIH IOL = 50µA
IOL = 8mA
IIN Input Leakage
Current
0 – 5.5 VIN = 5.5V or GND
ICC Quiescent Supply
Current
5.5 VIN = VCC or GND
ICCT Maximum ICC / Input 5.5 VIN = 3.4V, Other
Inputs = VCC or GND
IOFF Output Leakage
Current (Power
0.0 VOUT = 5.5V
Down State)
TA = 25°C
Min. Typ. Max.
2.0
2.0
0.8
0.8
4.40 4.50
3.94
0.0 0.1
0.36
±0.1
2.0
1.35
0.5
TA = –40°C
to +85°C
Min. Max. Units
2.0
V
2.0
0.8 V
0.8
4.40
V
3.80
0.1 V
0.44
±1.0 µA
20.0 µA
1.50 mA
5.0 µA
Noise Characteristics
Symbol
VOLP(5)
VOLV(5)
VIHD(5)
VILD(5)
Parameter
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum HIGH Level Dynamic Input Voltage
Maximum LOW Level Dynamic Input Voltage
Note:
5. Parameter guaranteed by design.
Conditions
CL = 50pF
CL = 50pF
CL = 50pF
CL = 50pF
VCC (V)
5.0
5.0
5.0
5.0
TA = 25°C
Typ. Limit
0.8
1.0
–0.8
1.0
2.0
0.8
Units
V
V
V
V
AC Electrical Characteristics
Symbol
Parameter
tPHL, tPLH Propagation Delay
CIN
Input Capacitance
CPD
Power Dissipation
Capacitance
VCC (V)
5.0 ± 0.5
Conditions
CL = 15pF
CL = 50pF
VCC = Open
(6)
TA = 25°C
Min. Typ. Max.
4.7 6.7
5.5 7.7
4
10
17
TA = –40°C
to +85°C
Min. Max.
1.0 7.5
1.0 8.5
10
Units
ns
pF
pF
Note:
6. CPD is defined as the value of the internal equivalent capacitance, which is calculated from the operating
current consumption without load. Average operating current can be obtained from the equation:
ICC (Opr.) = CPD • VCC • fIN + ICC / 6 (per gate)
©1997 Fairchild Semiconductor Corporation
74VHCT04A Rev. 1.4.0
4
www.fairchildsemi.com

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