VN0550 Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
VN0550 Datasheet PDF : 5 Pages
| |||
VN0550
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Min Typ Max Units Conditions
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in VGS(th) with temperature
Gate body leakage current
IDSS Zero gate voltage drain current
500
-
-
V
VGS = 0V, ID = 1.0mA
2.0
-
4.0
V
VGS = VDS, ID = 1.0mA
-
-3.8
-5.0 mV/OC VGS = VDS, ID = 1.0mA
-
-
100
nA VGS = ±20V, VDS = 0V
-
-
10
µA VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating,
TA = 125OC
ID(ON) ON-state drain current
-
100
-
150 350
-
mA VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
R
DS(ON)
Static drain-to-source
ON-state resistance
-
45
-
-
40
60
Ω
VGS = 5.0V, ID = 50mA
VGS = 10V, ID = 50mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
1.0
1.7
%/OC VGS = 10V, ID = 50mA
GFS Forward transconductance
50 100
-
mmho VDS = 25V, ID = 50mA
CISS Input capacitance
-
45
55
COSS Common source output capacitance
-
8.0
10
pF VGS = 0V, VDS = 25V, f = 1.0MHz
CRSS Reverse transfer capacitance
-
2.0 5.0
td(ON)
tr
td(OFF)
tf
Turn-ON time
Rise time
Turn-OFF time
Fall time
-
-
10
-
-
15
VDD = 25V,
-
-
10
ns ID = 150mA,
RGEN = 25Ω
-
10
VSD Diode forward voltage drop
-
0.8
-
V
VGS = 0V, ISD = 500mA
trr
Reverse recovery time
-
300
-
ns VGS = 0V, ISD = 500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Device
Package
ID
(continuous)*
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TC = 25OC
(W)
θJC
(OC/W)
(OθCJ/WA )
IDR*
(mA)
VN0550 TO-92
50
250
1.0
125
170
50
Notes:
* ID (continuous) is limited by max rated TJ.
IDRM
(mA)
250
Switching Waveforms and Test Circuit
10V
INPUT
90%
0V 10%
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tF
VDD
OUTPUT
0V
10%
90%
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2
Share Link: 