IRF520 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
IRF520 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF520
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
Gfs
Forward Transconductance
CONDITIONS
VGS= 0; ID= 0.25mA
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 5.6A
VGS= ±20V;VDS= 0
VDS= 100V; VGS=0
IS= 9.2A; VGS=0
VDS≥ 50V；ID= 5.6A
MIN
TYP MAX UNIT
100
V
2
4
V
0.27
Ω
±100
nA
25
uA
2.5
V
2.7
S
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