IRF520 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

IRF520

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRF520

·FEATURES

·Low RDS(on)

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speed

·Rugged

·Low Drive Requirements

·DESCRITION

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

9.2

A

IDM

Drain Current-Single Plused

37

A

PD

Total Dissipation @TC=25℃

60

W

Tj

Max. Operating Junction Temperature -55~175 ℃

Tstg

Storage Temperature

-55~175 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

2.5

℃/W

Rth j-a Thermal Resistance,Junction to Ambient

80

℃/W

isc website： www.iscsemi.com

1 isc & iscsemi is registered trademark

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