MJ11017 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

MJ11017

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJ11017

DESCRIPTION

·High DC Current Gain-

: hFE = 400(Min)@ IC= -10A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -150V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -10A

= -3.4V(Max)@ IC= -15A

·Complement to Type MJ11018

APPLICATIONS

·Designed for general purpose amplifiers ,low frequency

switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-30

A

IB

Base Current- Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-0.5

A

175

W

175

℃

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

0.86

UNIT

℃/W

isc Website：www.iscsemi.cn

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