MGF0905A Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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MGF0905A Datasheet PDF : 4 Pages
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< High-power GaAs FET (small signal gain stage)>
MGF0905A
L & S BAND / 2.5W
non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
OUTLINE DRAWING
Unit : m illim eters
①
②
φ2.2
②
0.6±0.2
③
RECOMMENDED BIAS CONDITIONS
Vds=8V Ids=800mA Rg=100 Refer to Bias Procedure
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
-17
-17
3200
-10
21.5
12
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) Gate to source cut-off voltage
Po
Output power
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
Rth(ch-a) *3 Thermal resistance
*2 :Channel-case
*3 :Channel-ambient
VDS=3V,VGS=0V
VDS=3V,ID=800mA
VDS=3V,ID=10mA
VDS=8V,ID(RF off)=800mA
f=1.65GHz,Pin=26dBm
ΔVf method
ΔVf method
GF-7
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Min.
1600
500
-1
33
-
-
-
Limits
Typ.
2400
800
-3
34
40
-
-
Max.
3200
-
-5
-
-
12.5
72.5
Unit
mA
mS
V
dBm
%
C/W
C/W
Publication Date : Apr., 2011
1
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