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VN10KN3-P014-G Ver la hoja de datos (PDF) - Supertex Inc

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componentes Descripción
Fabricante
VN10KN3-P014-G Datasheet PDF : 6 Pages
1 2 3 4 5 6
VN10K
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(A)
TO-92
310
1.0
1.0
125
170
310
1.0
Notes:
† ID (continuous) is limited by max rated Tj . (VN0106N3 can be used if an ID (continuous) of 500mA is needed.)
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in VGS(th) with temperature
Gate body leakage
IDSS Zero gate voltage drain current
ID(ON) On-state drain current
RDS(ON) Static drain-to-source on-state resistance
ΔRDS(ON)
GFS
CISS
COSS
CRSS
Change in RDS(ON) with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
60 -
0.8 -
- -3.8
-
-
-
-
-
-
0.75 -
-
-
-
-
- 0.7
100 -
- 48
- 16
- 2.0
-
V VGS = 0V, ID = 100µA
2.5
V VGS = VDS, ID= 1.0mA
- mV/OC VGS = VDS, ID= 1.0mA
100
nA VGS = 15V, VDS = 0V
10
VGS = 0V, VDS = 45V
500
µA VGS = 0V, VDS = 45V,
TA = 125°C
-
A VGS = 10V, VDS = 10V
7.5
Ω
VGS = 5.0V, ID = 200mA
5.0
VGS = 10V, ID = 500mA
-
%/OC VGS = 10V, ID = 500mA
- mmho VDS = 10V, ID = 500mA
60
VGS = 0V,
25
pF VDS = 25V,
5.0
f = 1.0MHz
t(ON)
t(OFF)
Turn-on time
Turn-off time
-
-
10
VDD = 15V,
ns ID = 600mA,
-
-
10
RGEN = 25Ω
VSD Diode forward voltage drop
- 0.8
-
V VGS = 0V, ISD = 500mA
trr
Reverse recovery time
- 160 -
ns VGS = 0V, ISD = 500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
10%
0V
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tf
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2

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