VN10KE Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
Número de pieza
componentes Descripción
Fabricante
VN10KE Datasheet PDF : 3 Pages
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N-CHANNEL ENHANCEMENT
MODE MOSFET
VN10KE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
VGS(th)
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
VGS = 0
VDS = VGS
ID = 100µA
ID = 1.0mA
IGSS
Gate-Source Leakage Current VGS = 15V
VDS = 0V
IDSS
Zero Gate Voltage
Drain Current
VDS = 48V
VGS = 0
TJ = 125°C
ID(ON)(2)
On-State Drain Current
VDS = 10V
VGS = 10V
RDS(on)(2)
Static Drain-Source
On-State Resistance
gfs(2)
gos(2)
Forward Transconductance
Common Source
Output Conductance
VGS = 5V
VGS = 10V
VDS = 10V
VDS = 7.5V
ID = 0.2A
ID = 0.5A
TJ = 125°C
ID = 0.5A
ID = 50mA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
VGS = 0
VDS = 25V
f = 1.0MHz
VDD = 15V, RL= 23Ω, RG = 50Ω
ID = 1.0A, VGEN = 10V
Min. Typ. Max. Units
60
V
0.8
2.5
V
100
nA
10
µA
500
0.75
A
7.5
5
Ω
9
100
mƱ
0.2
60
25
pF
5
10
ns
10
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8418
Website: http://www.semelab-tt.com
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