OPB703WZ Ver la hoja de datos (PDF) - TT Electronics.

Número de pieza

componentes Descripción

Fabricante

OPB703WZ

Reflective Object Sensor

TT Electronics. 

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB70DWZ and OPB70FWZ)

SYMBOL

PARAMETER

MIN TYP MAX UNITS

TEST CONDITIONS

Input Diode (See OVLAS6CB8 for additional information — for reference only)

VF Forward Voltage

-

- 2.6 V IF = 40mA

IR Reverse Current

-

- 100 µA VR = 2 V

Output Phototransistor (See OP505 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage 30

-

-

V ICE = 100µA, IF = 0, EE =0

V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 -

-

V IEC = 100µA, IF = 0, EE =0

ICEO Collector Dark Current

-

- 250 nA VCE = 10 V, IF = 0, EE =0

Coupled

IC(ON)

On-State Collector Cur-

rent

OPB70DWZ .10

OPB70FWZ .25

-

-

1.5

mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)

3.5

V(SAT) Saturation Voltage

-

-

0.4

V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (1)(3)

ICX Crosstalk

-

-

5.0 µA VCE = 5 V, IF = 40mA(2)

Notes:

(1) The distance from the assembly face to the reflective surface is d.

(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak,

Catalog # E 152 7795.

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