OPB704 Ver la hoja de datos (PDF) - TT Electronics.

Número de pieza

componentes Descripción

Fabricante

OPB704

Reflective Object Sensor

TT Electronics. 

Electrical Characteristics (TA = 25° C unless otherwise noted)

(OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ)

SYMBOL

PARAMETER

MIN TYP MAX UNITS

TEST CONDITIONS

Input Diode (See OP265 for additional information — for reference only)

VF Forward Voltage

-

- 1.7 V IF = 40mA

IR Reverse Current

-

- 100 µA VR = 2 V

Output Phototransistor (See OP505 for additional information — for reference only)

V(BR)CEO Collector-Emitter Breakdown Voltage

30

-

-

V ICE = 100 µA

V(BR)ECO Emitter-Collector Breakdown Voltage

5

-

-

V IEC = 100µA

ICEO Collector Dark Current

-

- 250 nA VCE = 10 V, IF = 0, EE =0

Coupled

On-State Collector Current

OPB70HWZ

IC(ON)

OPB703, OPB703WZ

OPB704, OPB704WZ

0.60 -

0.30 -

0.20 -

3.5

2.5

VCE = 5 V, IF = 40mA , d = 0.15” (4)(6)

2.5 mA

OPB704G, OPB704GWZ

0.50 - 6.0

VCE = 5 V, IF = 40mA , d = 0.20” (4)(6)

Crosstalk

ICX

OPB703, OPB703WZ

OPB704, OPB704WZ, OPB70HWZ

-

-

-

-

20

20

µA VCE = 5 V, IF = 40mA(5)

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.

(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ,

and OPB70FWZ derate linearly 1.82 mW/° C above 25° C.

(4) The distance from the assembly face to the reflective surface is d.

(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.

(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata-

log # E 152 7795.

(7) All parameters tested using pulse techniques.

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