BFX89 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BFX89 Datasheet PDF : 2 Pages
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BFX89-BFY90
THERMAL DATA
R(h j-case Thermal Resistance Junction-case
Rth i-amb Thermal Resistance Junction-ambient
Max
580
°C/W
Max
880
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 <C unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cutoff Current
(le-0)
Test Conditions
VCB - 1 5 V
Mln. Typ. Max. Unit
10
nA
VCEK'
Collector-emitter Knee
Voltage
Ic - 20 mA
0.75
V
nF£
DC Current Gain
lc -2 mA
VCE -1 V
for BFX89
20
150
for BFY90
25
150
lc =25 mA VCE -1 V
20
125
fr
Transition Frequency
VCE - 5 V
lc -2mA
f - 500 MHz
for BFX89
1
GHz
for BFY90
1
1.1
GHz
lc - 25 mA
for BFX89
1.2
GHz
for BFY90
1.3
1.4
GHz
CCBO(1) Collector-base Capacitance I E = 0
f - 1 MHz
VCB - 1 0 V
for BFX89
for BFY90
1.7
PF
1.5
PF
Cr.<2> Reverse Capacitance
NF(2)
Noise Figure
lc-2mA
f - 1 MHz
VCE - 5 V
for BFX89
for BFY90
lc - 2 mA VCE - 5 V
Rg - Optimized f - 100 kHz
for BFY90 Only
f - 200 MHz
R, . Optimized for BFX89
for BFY90
f = 500 MHz
Rg=50fl forBFX89
for BFY90
f > 800 MHz
Rg = Optimized for BFX89
for BFY90
0.6
PF
0.6
0.8
PF
4
dB
3.3
4
dB
2.5
3.5
dB
6.5
dB
5
dB
7
dB
5.5
dB
Gp.<2> Power Gain (not neutralized) for BFX89
lc-8mA
Vce-10V
f - 200 MHz
19
22
dB
f = 800 MHz
7
dB
for BFY90
lc-14mA VCE -10V
f - 200 MHz
21
23
dB
Po
Output Power
f . 800 MHz
8
dB
loi BFX89
lc=8mA
VCE -10V
dim--30dB
131 Channel 9
(4) Channel 62
6
mW
6
mW
for BFY90
c = 14mA
VCE - 1 0 V
dim =-30dB
<3> Channel 9
|4) Channel 62
10
12
mW
12
mW
• IB, value lor witch !c> 22mA atVCE - 1 V
1 ) Shield lead not grounded
2) Shield toad grounded
(3) Ip . 202 MHz, f, = 205 MHz, f(Jw, - 208 MHz
W t- - ™ "Hz- '• - 0°2 MHz' '"«> - 806 MHz
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