APTM100DDA35T3G Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
APTM100DDA35T3G Datasheet PDF : 6 Pages
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APTM100DDA35T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.25 0.7
0.2
0.5
0.15
0.3
0.1
0.05
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
60
VGS=15, 10&8V
7V
50
40
6.5V
30
20
10
0
0
6V
5.5V
5V
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
RDS(on) vs Drain Current
1.4
Normalized to
1.3 VGS=10V @ 11A
1.2
VGS=10V
1.1
1
VGS=20V
0.9
0.8
0
10 20 30 40 50 60
ID, Drain Current (A)
Transfert Characteristics
80
70
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
60
50
40
30
20
TJ=25°C
10
TJ=125°C
0
TJ=-55°C
0123456789
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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4–6
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