APTM100DDA35T3G Ver la hoja de datos (PDF) - Microsemi Corporation
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APTM100DDA35T3G Datasheet PDF : 6 Pages
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APTM100DDA35T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
3
VGS = ±30V, VDS = 0V
100 µA
500
350 420 mΩ
5V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 22A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Min Typ Max Unit
5.2
0.88
nF
0.16
186
24
nC
122
18
12
ns
155
40
900
µJ
623
1423
µJ
779
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1000
V
VR=1000V
IF = 30A
IF = 60A
IF = 30A
Tj = 25°C
Tj = 125°C
Tc = 70°C
Tj = 125°C
250
500
µA
30
A
1.9 2.3
2.2
V
1.7
Tj = 25°C
290
IF = 30A
VR = 667V
Tj = 125°C
390
ns
di/dt=200A/µs Tj = 25°C
670
nC
Tj = 125°C
2350
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