APTM100DDA35T3G Ver la hoja de datos (PDF) - Microsemi Corporation

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APTM100DDA35T3G

Dual Boost chopper MOSFET Power Module

Microsemi Corporation 

APTM100DDA35T3G

Dual Boost chopper

MOSFET Power Module

VDSS = 1000V

RDSon = 350mΩ typ @ Tj = 25°C

ID = 22A @ Tc = 25°C

13 14

CR1

CR2

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

22 7

23 8

Q1

26

Q2

4

27

3

29

30

15

31

R1

32

16

28 27 26 25

29

30

23 22

20 19 18

16

15

31

32

2 34

78

14

13

10 11 12

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

Features

• Power MOS 7® MOSFETs

- Low RDSon

- Low input and Miller capacitance

- Low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outstanding performance at high frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• Each leg can be easily paralleled to achieve a single

boost of twice the current capability

• RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings Unit

VDSS

ID

IDM

VGS

RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

1000

V

Tc = 25°C

22

Tc = 80°C

17

A

88

±30

V

420

mΩ

PD Maximum Power Dissipation

Tc = 25°C

390

W

IAR Avalanche current (repetitive and non repetitive)

EAR Repetitive Avalanche Energy

EAS Single Pulse Avalanche Energy

25

A

50

mJ

3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

www.microsemi.com

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