MUR860S(2008) Ver la hoja de datos (PDF) - Sirectifier Electronics
Número de pieza
componentes Descripción
Fabricante
MUR860S Datasheet PDF : 3 Pages
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MUR860S
Ultra Fast Recovery Diodes
C(TAB)
A
A
NC
Dimensions TO-263(D2PAK)
C
A=Anode, NC= No connection, TAB=Cathode
MUR860S
VRSM
V
600
VRRM
V
600
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I2t
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC
TVJ=150oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45oC
TVJ=150oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md mounting torque
Weight
Maximum Ratings
Unit
16
8
A
130
100
110
85
A
95
50
50
36
A2s
37
-40...+150
150
oC
-40...+150
50
W
0.4...0.6
Nm
2
g
P1
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com
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