SSC-SFT825N-S Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
SSC-SFT825N-S Datasheet PDF : 13 Pages
| |||
4. Electro-Optical Characteristics
(Ta=25ºC)
Parameter
Symbol Condition Min Typ Max Unit
Forward Voltage
Red
IF =20mA 1.8
2.1
2.3
Green
VF
IF =20mA 3.0
3.2
3.5-
V
Blue
IF =20mA 3.0
3.2
3.5-
Reverse Current
Red
Green
Blue
IR
VR=10V
(per die)
-
-
-
-
-
-
1
1
µA
1
Luminance Intensity *1
Red
Green
Blue
IV
IF =20mA
(per chip)
-
-
-
700 1100
1200 1600 mcd
400
560
Peak Wavelength
Red
IF =20mA
-
632
-
Green
λP
IF =20mA
-
518
-
nm
Blue
IF =20mA
-
453
-
Red
IF =20mA 620
623
625
Dominant Wavelength
Green
λd
IF =20mA 520
527
535
nm
Blue
IF =20mA 455
460
465
Red
IF =20mA
-
14
-
Spectral Bandwidth
Green
∆λ IF =20mA
-
33
-
nm
Blue
IF =20mA
-
23
-
Viewing Angle *3
R, G, B
2θ½
IF =20mA
(per die)
-
120
-
deg.
*1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%
*2 Please refer to CIE 1931 chromaticity diagram
*3 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
SSC-QP-7-03-08(REV.00)
SEOUL SEMICONDUCTOR CO., LTD.
148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea
Phone : 82-2-2106-7305~6
- 3/13 -
SSC-SFT825N-S
Share Link: 