DFA02S Ver la hoja de datos (PDF) - Vishay Semiconductors

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DFA02S

Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers

Vishay Semiconductors 

DF005SA, DF01SA, DF02SA, DF04SA, DF06SA, DF08SA, DF10SA

www.vishay.com

Vishay General Semiconductor

10

1

0.1

0.01

0.4

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.6

0.8

1.0

1.2

1.4

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Forward Characteristics Per Diode

100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

100

10

TJ = 125 °C

1

0.1

TJ = 50 °C

0.01

0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.205 (5.2)

0.195 (5.0)

Case Style DFS

0.047 (1.20)

0.040 (1.02)

10

1

0.1

0.01

0.1

1

10

100

t - Heating Time (s)

Fig. 6 - Typical Transient Thermal Impedance

Mounting Pad La yout

0.047 MIN.

(1.20 MIN.)

0.060 MIN.

(1.52 MIN.)

0.404 MAX.

(10.26 MAX.)

0.335 (8.51)

0.320 (8.13) 45°

0.130 (3.3) 0.013 (0.330)

0.120 (3.05) 0.009 (0.241)

0.404 (10.3)

0.386 (9.80)

0.255 (6.5)

0.245 (6.2)

0.205 (5.2)

0.195 (5.0)

0.060 (1.524)

0.040 (1.016) 0.013 (0.330)

0.003 (0.076)

Revision: 19-Aug-13

3

Document Number: 88574

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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