55GN01FA-TL-H Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
55GN01FA-TL-H Datasheet PDF : 9 Pages
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55GN01FA
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
⏐S21e⏐21
⏐S21e⏐22
NF
Conditions
VCB=10V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=10mA
VCE=3V, IC=5mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=5V, IC=20mA, f=400MHz
VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω
Ordering Information
Device
55GN01FA-TL-H
Package
SSFP
Shipping
8,000pcs./reel
Ratings
Unit
min
typ
max
0.1
μA
1
μA
100
160
3.0
4.5
GHz
5.5
GHz
0.95
1.2
pF
0.6
pF
8
11
dB
16
19
dB
1.9
dB
memo
Pb Free and Halogen Free
IC -- VCE
50
45
0.30mA
40
0.25mA
35
30
0.20mA
25
0.15mA
20
15
0.10mA
10
0.05mA
5
0
IB=0mA
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT06252
hFE -- IC
3
VCE=5V
2
100
7
5
3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector Current, IC -- mA
IT06254
IC -- VBE
80
VCE=5V
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT06253
fT -- IC
10
VCE=5V
7
5
3
2
1.0
1.0
23
5 7 10
23
Collector Current, IC -- mA
5 7 100
IT07319
No. A1113-2/9
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