S2ABF Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
S2ABF Datasheet PDF : 4 Pages
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S2ABF THRU S2MBF
SMBF Plastic-Encapsulate Diodes
Features
●Io
2A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● S2ABF-S2MBF : S2AB-S2MB
SMBF
HD BF60
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol Unit
VRRM
V
VRMS
V
Test Conditions
S2
ABF BBF DBF GBF JBF KBF MBF
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
IF(AV)
IFSM
TJ
TSTG
A 60HZ Half-sine wave, Resistance
load, TL =100℃
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
2.0
50
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
S2
ABF BBF DBF GBF JBF KBF MBF
Peak Forward Voltage
VF
V
IF =2.0A
1.1
Peak Reverse Current
IRRM1
IRRM2
Ta =25℃
μA
VRM=VRRM
Ta =125℃
5.0
125
Thermal
Resistance(Typical)
RθJ-A
RθJ-L
℃/W
Between junction and ambient
Between junction and terminal
531)
161)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1
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