DTA143TE Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

DTA143TE

Digital Transistor

Galaxy Semi-Conductor 

Production specification

Digital Transistor

DTAXXXTE

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-Base breakdown Voltage

Collector-Emitter breakdown Voltage

Emitter-Base breakdown Voltage

Collector cutoff Current

Emitter cutoff Current

Collector-Emitter saturation voltage

DTA114TE

DTA143TE

DTA144TE

DC Current Gain

Input Resistor

DTA143TE

DTA114TE

DTA144TE

Input Resistor(R1)Tolerance

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

∆R1

Gain-Bandwidth Product

fT

IC=-50μA

IC=-1mA

IE=-50μA

VCB=-50V

VEB=-4V

IC/IB=-10mA/-1mA

IC/IB=-5mA/-0.25mA

IC/IB=-5mA/-0.5mA

IC=-1mA,VCE=-5V

-

VCE=-10V,IE=-5mA,

f=100MHz

-50 -

-V

-50 -

-V

-5

-

-V

-

-

-0.5 μA

-

- -0.5 μA

-

- -0.3 V

100 250

7 10

3.29 4.7

32.9 47

-30

600

13

6.11 kΩ

61.1

+30 %

- 250 - MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

H037

Rev.A

www.gmesemi.com

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