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Fabricante

C106M-Z

Silicon Planar PNPN Thyristor (4A SCR)

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

Silicon Planar PNPN Thyristor (4A SCR)

C106M-Z

DESCRIPTION

Thyristor in a TO-126 Plastic Package.

FEATURES

The consumption level provide reliable applications,

such as temperature, lighting, speed, etc.

APPLICATIONS

Applied to high Voltage control circuit.

Symbol

○

Anode

Gate

○

○

Cathode

Absolute Maximum Ratings(Ta=25℃)

Parameter

Symbol

Test Conditions

Repetitive peak off-state

voltages

VDRM，

VRRM

RGK=1K

TC=-40~110℃

C106M-Z

RMS on-state current

Average on-state current

Non-repetitive peak on-state

current

I2t for fusing

Peak gate power

Peak Average power

Peak gate current

Junction Temperature

Storage Temperature Range

IT(RMS)

IT(AV)

ITSM

I 2t

PGM

PG(AV)

IGM

Tj

Tstg

TC=80℃

TC=80℃

1/2 Cycle, Sine Wave,60Hz,

TJ=110℃

t=8.3ms

TC=80℃

TC=80℃

TC=80℃

A

D

A2

R1

E

b2

Y

ø

12 3

L1

b

L

h

E2b

e

c

e1

D2

E2a

TO-126

Dim

Min

Max Typ

A

2.400 2.900

-

A2

1.060 1.500

-

b

0.660 0.860

-

b2

1.170 1.470

-

R

c

0.400 0.600

-

D

7.400 8.200

-

D2

5.010 5.310

-

E

10.60 11.20

-

E2a 2.850 3.150

-

E2b 4.850 5.150

-

e

-

-

2.280

e1

-

-

4.560

h

0.00 0.30

-

L

14.50 15.90

-

L1

1.700 2.100

-

R

-

-

1.840

R1

-

-

0.760

Y

3.600 3.900

-

Ø

3.100 3.550

-

All Dimensions in mm

1 Cathode

2 ANODE

3 GATE

TO-126

Rating

Unit

600

V

4

A

2.55

A

20

A

1.65

A 2S

500

mW

100

mW

0.2

A

-40～+110 ℃

-40～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Repetitive peak off-state IDRM,

current

IRRM

On-state voltage

VTM

Gate trigger current

I GT

Test Conditions

VAK=Rated VDRM or Tc =25℃

VRRM

RGK=1KΩ

Tc=110℃

ITM=4.0A

tp=380uS

VAK=6.0Vdc

RL=100Ω

Tc =25℃

Tc=-40℃

Min Typ

15

35

Gate trigger voltage

VGT

VAK=6.0Vdc

RL=100Ω

Tc =25℃

Tc =-40℃

0.4 0.60

0.5 0.75

Holding current

IH

VAK=12.0Vdc

RGK=1KΩ

Tc =25℃

Tc =-40℃

Tc=110℃

0.19

0.33

0.07

Latching current

Critical rate of rise of

off-state voltage

IL

dv/dt

VAK=12.0Vdc

IG=20mA

Tc =25℃

Tc =-40℃

VAK=Rated VDRM, RGK=1KΩ

TC=110℃

0.20

0.35

8.0

Max

10

100

2.2

200

500

0.80

1.00

3.0

6.0

2.0

5.0

7.0

Unit

μA

V

μA

V

mA

mA

V/us

2018. 12. 13

Revision No : 0

1/2

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