VG36128161BT Ver la hoja de datos (PDF) - Vanguard International Semiconductor

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componentes Descripción

Fabricante

VG36128161BT

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

VG36128401BT / VG36128801BT / VG36128161BT

CMOS Synchronous Dynamic RAM

AC Characteristics (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V , VSS = VSSQ = 0V, unless otherwise noted)

Test Conditions

AC input Levels (VIH/VIL)

Input rise and fall time

2.0 / 0.8V

1ns

Input timing reference level /

Output timing reference level

Output load condition

1.4V

50pF

Output Load Conditions

VDDQ

VOUT

Device

Under

Test

VDDQ

Ω Z = 50

50PF

Document :1G5-0183

Rev.1

Page 7

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