CM1215 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

CM1215

1, 2 and 4-Channel Low Capacitance ESD Arrays

ON Semiconductor 

CM1215

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Units

Operating Supply Voltage (VP−VN)

Diode Forward DC Current (Note 1)

6

V

20

mA

DC Voltage at any Channel Input

Operating Temperature Range

(VN−0.5) to (VP+0.5)

V

Ambient

−40 to +85

°C

Junction

−40 to +125

°C

Storage Temperature Range

−40 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter

Operating Temperature Range

Package Power Rating

SOT23−3 Package (CM1215−01SO)

SOT143 Package (CM1215−02SR)

SOT23−5 Package (CM1215−02SO)

SOT23−6 Package (CM1215−04SO)

Rating

–40 to +85

225

225

225

225

Units

°C

mW

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max Unit

VP

Operating Supply Voltage (VP−VN)

IP

Operating Supply Current

VF

Diode Forward Voltage

Top Diode

Bottom Diode

(VP−VN) = 3.3 V

IF = 20 mA; TA = 25°C

3.3

5.5

V

8

mA

V

0.6

0.8

0.95

0.6

0.8

0.95

ILEAK

Channel Leakage Current

TA = 25°C; VP = 5 V, VN = 0 V

±0.1 ±1.0

mA

CIN

Channel Input Capacitance

At 1 MHz, VP = 3.3 V,

VN = 0 V, VIN = 1.65V;

1.6

2.0

pF

ΔCIN

Channel I/O to GND Capacitance Difference

0.04

pF

CMUTUAL Mutual Capacitance

(VP−VN) = 3.3 V

0.13

pF

VESD

ESD Protection

kV

Peak Discharge Voltage at any channel input, TA = 25°C

±15

in system, contact discharge

(Notes 2 and 3)

per IEC 61000−4−2 standard

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

IPP = 1 A, tP = 8/20 mS;

TA = 25°C;

V

VP+1.5

VN−1.5

RDYN

Dynamic Resistance

Positive transients

Negative transients

IPP = 1 A, tP = 8/20 mS;

TA = 25°C;

W

0.4

0.4

1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.

3. From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2 mF ceramic capacitor.

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