SD103AX Ver la hoja de datos (PDF) - Diode Semiconductor Korea
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Fabricante
SD103AX Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Schottky Barrier Diode
SD103AX
FEATURES
z Low forward voltage drop.
Pb
Lead-free
z Guard ring construction for transient protection.
z Low reverse recovery time.
z Low reverse capacitance.
APPLICATIONS
z Schottky barrier application.
SOD-523
ORDERING INFORMATION
Type No.
Marking
SD103AX
S4
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC Reverse voltage
VR
Continuous forward current
IF
Repetitive peak forward current @t≤1.0s IFRM
Total power dissipation
Ptot
Total resistance junction to ambient
RθJA
Junction temperature
Tj
Storage temperature
Tstg
40
350
1
400
300
125
-65-125
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min.
V(BR)R
40
VF
IR
Cd
trr
Typ. Max. Unit
V
0.37
V
0.60
5.0 μA
50
pF
10
ns
Conditions
IR=100μA
IF=20mA
IF=200mA
VR=30V
VR=0V,f=1MHz
IF=IR=50mA,RL=100Ω
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