MUR180E Ver la hoja de datos (PDF) - Digitron Semiconductors
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MUR180E Datasheet PDF : 3 Pages
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DIGITRON SEMICONDUCTORS
MUR170E-MUR1100E
1A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (square wave)
Mounting method per note 2
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single
phase, 60Hz)
Operating and storage junction temperature range
Maximum thermal resistance
Junction to ambient
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, Tstg
RӨJA
170E
700
MUR
180E
190E
800
900
1.0 @ TA = 95°C
35
-65 to +175
Note 1
1100E
1000
Unit
V
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage (1)
(IF = 1.0A, TJ = 150°C)
(IF = 1.0A, TJ = 25°C)
Maximum instantaneous reverse current (1)
(Rated dc voltage, TJ = 100°C)
(Rated dc voltage, TJ = 25°C)
Maximum reverse recovery time
(IF = 1.0A, di/dt = 50A/µs)
(IF = 0.5A, IR = 1.0A, IREC = 0.25A)
Maximum forward recovery time
(IF = 1.0A, di/dt = 100A/µs, IREC to 1.0V)
Controlled avalanche energy
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
Note 2: PC board with 1 ½” x 1 ½” copper surface.
Symbol
VF
170E
IR
trr
tfr
WAVAL
180E
MUR
1.50
1.75
600
10
100
75
75
10
190E
MECHANICAL CHARACTERISTICS
Case
DO-41
Marking
Body painted, alpha-numeric
Polarity
Cathode band
1100E
Unit
V
µA
ns
ns
mJ
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128
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