BYG24DHM3/TR Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
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BYG24DHM3/TR Datasheet PDF : 4 Pages
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BYG24D-M3/HM3, BYG24G-M3/HM3, BYG24J-M3/HM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL BYG24D
Minimum breakdown voltage
IR = 100 μA
VBR
200
Maximum instantaneous
forward voltage
IF = 1 A
IF = 1.5 A
TJ = 25 °C
VF (1)
Maximum reverse current
TJ = 25 °C
VR = VRRM
IR
TJ = 100 °C
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
BYG24G
400
1.15
1.25
1
10
140
BYG24J
600
UNIT
V
V
µA
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG24D
Junction to case
Maximum thermal resistance, junction to ambient
RJC
RJA (1)
RJA (2)
Notes
(1) Mounted on epoxy-glass hard tissue 35 μm x 17 mm2 cooper area per electrode
(2) Mounted on epoxy-glass hard tissue 35 μm x 50 mm2 cooper area per electrode
BYG24G
25
150
125
BYG24J
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BYG24D-M3/TR
0.064
TR
BYG24D-M3/TR3
0.064
TR3
BYG24DHM3/TR (1)
0.064
TR
BYG24DHM3/TR3 (1)
0.064
TR3
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
60
RθJA =
125 K/W
50
155 K/W
40
175 K/W
30
VR = VRRM
PR - Limit
at 100 % VR
20
10
0
25
PR - Limit
at 80 % VR
50
75
100
125
150
Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
Revision: 23-Feb-16
2
Document Number: 89475
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