EMP111-P1 Ver la hoja de datos (PDF) - Excelics Semiconductor, Inc.
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EMP111-P1 Datasheet PDF : 2 Pages
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UPDATED: 05/07/2008
EMP111-P1
7.0 – 9.0 GHz Power Amplifier MMIC
FEATURES
• 7.0 – 9.0 GHz Operating Frequency Range
• 27.0dBm Output Power at 1dB Compression
• 17.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 17dBm
Excelics
EMP111
-P1
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
Contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD= 7 V, IDQ= 400 mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
VDD
Rth
Tb
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
Input Return Loss
Output Return Loss
Saturate Drain Current
VDS =3V, VGS =0V
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
7.0
9.0
GHz
25.5
27.0
dBm
15.0
17.0
dB
-40
dBc
-12
dB
-6
dB
496
620
744
mA
7
8
V
15
oC/W
- 35
+ 85
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
8V
VGS
Gate to Source Voltage
-4V
IDD
Drain Current
Idss
IGSF
Forward Gate Current
9 mA
PIN
Input Power
@ 3dB compression
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT
Total Power Dissipation
7.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised May 2008
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