BDV64B Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BDV64B Datasheet PDF : 2 Pages
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^E.mi-Condu.cto'i Lpioducti, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDV64/A/B/C
DESCRIPTION
• Collector Current -lc= -12A
• Collector-Emitter Saturation Voltage-
: VcEfsatr -2.0V(Max.)@ lc= -5A
• Complement to Type BDV65/A/B/C
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
BDV64
-60
VCBO
Collector-Base
Voltage
BDV64A
BDV64B
-80
-100
UNIT
V
fI T: ?2
H£
'
>W ' i • |»W> 1 •
PIN 1.BASE
5. COLLECTOR
S.BvllTTER
1 23
TO-3PN package
VCEO
Collector-Emitter
Voltage
BDV64C
-120
i^
x' i: . « . „ '
BDV64
-60
* ilr :'' ':--; ':'\ •
It^EJ- '
|
'.-•' ••
'
BDV64A
-80
V
BDV64B
-100
'• H
t
BDV64C
-120
K
:
., ,
^.-.
0 -»"••»-L
VEBO Emitter-Base Voltage
-5
V
i
-
Ic
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-15
A
mm
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25°C
PC
Collector Power Dissipation
@ Ta=25"C
-0.5
A
125
W
3.5
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
Tj
Junction Temperature
150
'C
F 3.40 3.60
G 2.90 3,10
Tstg
Storage Temperature Range
-65-150
"C
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
THERMAL CHARACTERISTICS
L 1.90 2.10
N 10.89 10.91
SYMBOL
PARAMETER
MAX UNIT
K,
Rth j-c Thermal Resistance.Junction to Case
1.0 r/w
Q 4.90 5.10
R 3.35 3.45
s 1.995 2.005
g 5.90 6.10
Rth j-a Thermal Resistance.Junction to Ambient 35.7 •c/w
Y 9.90 10.10
Oiifilih/ S
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