TIP100-BP-HF Ver la hoja de datos (PDF) - Micro Commercial Components

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Fabricante

TIP100-BP-HF

NPN Plastic Medium-Power Silicon Transistors

Micro Commercial Components 

MCC

TM

Micro Commercial Components

 omponents

20736 Marilla Street Chatsworth



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Features

• Mounting Torgue: 5 in-lbs Maximum

• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

• High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc

• Halogen free available upon request by adding suffix "-HF"

• Low Collector-Emitter Saturation Voltage

• Monolithic Construction with Built-in Base-Emitter Shunt Resistors

• TO-220 Compact package

• Epoxy meets UL 94 V-0 flammability rating

• Moisure Sensitivity Level 1

Maximum Ratings

Symbol

Parameter

Rating

Unit

VCEO

Collector-Emitter Voltage

TIP100

TIP101

TIP102

60

80

100

V

VCBO

Collector-Base Voltage

TIP100

60

TIP101

80

V

TIP102

100

VEBO

IC

ICP

IB

PD

TJ,

TSTG

Emitter-Base Voltage

Collector Current-continuous

Collector Current-peak

Base Current

Collector Dissipation @TC=25OC

Derate above 25 OC

Junction Temperature

Storage Temperature

5.0

8.0

15

1.0

80

0.64

-55 to +150

-55 to +150

V

A

A

A

W

W/ OC

OC

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

VCEO(SUS) Collector-Emitter Sustaining Voltage

(IC=30mAdc, IB=0)

TIP100

60

TIP101

80

TIP101 100

ICEO

Collector Cut-off Current

(VCE=30Vdc, IB=0)

(VCE=40Vdc, IB=0)

(VCE=50Vdc, IB=0)

TIP100

---

TIP101

---

TIP102

---

ICBO

Collector Cut-off Current

(VCB=60Vdc, IE=0)

(VCB=80Vdc, IE=0)

(VCB=100Vdc, IE=0)

TIP100

---

TIP101

---

TIP102

---

IEBO

Emitter Cut-off Current

(VBE=5.0Vdc, IC=0)

---

ON CHARACTERISTICS (1)

---

---

Vdc

---

50

50

µAdc

50

50

50

µAdc

50

8.0

mAdc

hFE(1)

DC Current Gain

(IC=3.0Adc, VCE=4.0Vdc)

(IC=8.0Adc, VCE=4.0Vdc)

VCE(sat) Collector-Emitter Saturation Voltage

(IC=3.0Adc, IB=6.0mAdc)

(IC=8.0Adc, IB=80mAdc)

VBE(ON)

Base-Emitter On Voltage

(IC=8.0Adc,VCE=4.0Adc)

hfe

Small-Signal Current Gain

(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)

Cob

Output Capacitance

(VCB=10V, IE=0, f=0.1MHz)

(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%

1000

200

---

---

---

4.0

---

20000

---

2.0

2.5

2.8

---

200

----

Vdc

Vdc

---

pF

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

TIP100

TIP101

TIP102

NPN Plastic

Medium-Power

Silicon Transistors

TO-220

B

F

C

S

Q

A

12 3

H

T

U

K

V

L

D

G

N

J

R

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.560

.625

14.22

15.88

B

.380

.420

9.65

10.67

C

.140

.190

3.56

4.82

D

.020

.045

0.51

1.14

F

.139

.161

3.53

4.09

∅

G

.190

.110

2.29

2.79

H

---

.250

---

6.35

J

.012

.025

0.30

0.64

K

.500

.580

12.70

14.73

L

.045

.060

1.14

1.52

N

.190

.210

4.83

5.33

Q

.100

.135

2.54

3.43

R

.080

.115

2.04

2.92

S

.045

.055

1.14

1.39

T

.230

.270

5.84

6.86

U

-----

.050

-----

1.27

V

.045

-----

1.15

-----

Revision: C

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2013/01/01

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