BC807-25W Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
BC807-25W Datasheet PDF : 5 Pages
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Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z For general AF applications.
z High collector current.
z High current gain.
z Low collector-emitter saturation voltage.
z Complements the BC817W.
Pb
Lead-free
BC807W
APPLICATIONS
z For general purpose amplification and switching.
ORDERING INFORMATION
Type No.
Marking
BC807-16W/25W/40W
5A/5B/5C
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Peak Collector Current
Base Current
Peak Base Ccurrent
Collector Dissipation
Junction and Storage Temperature
-50
-45
-5
-500
-1
-0.1
-0.2
250
-65 to +150
Units
V
V
V
mA
A
A
A
mW
℃
F044
Rev.A
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