KCW65 Ver la hoja de datos (PDF) - KEXIN Industrial
Número de pieza
componentes Descripción
Fabricante
KCW65 Datasheet PDF : 2 Pages
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SMD Type
NPN Transistors
BCW65 (KCW65)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
DC current gain
BCW65A
BCW65B/BCW65C
DC current gain
BCW65A
BCW65B/BCW65C
DC current gain
BCW65A
BCW65B
BCW65C
DC current gain
BCW65A
BCW65B/BCW65C
Collector output capacitance
Collector input capacitance
Noise figure
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 32 V , IE= 0
IEBO VEB= 4V , IC=0
IC=100 mA, IB=10mA
VCE(sat)
IC= 500 mA, IB= 50mA
VBE(sat) IC= 500 mA, IB= 50mA
hFE(1) VCE= 10V, IC= 100uA (Note.1)
hFE(2) VCE= 1V, IC= 10mA (Note.1)
hFE(3) VCE= 1V, IC= 100mA (Note.1)
hFE(4) VCE= 2V, IC= 500mA (Note.1)
Cob VCB= 6V, IE= 0,f=1MHz
Cib VEB= 0.5V, IC= 0,f=1MHz
NF
VCE= 5V, IC= 0.2mA
RS=1KΩ,f=1MHZ,BW=200Hz
fT
VCE= 10V, IC= 20mA,f=100MHz
Note.1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Transistors
Min Typ Max Unit
60
32
V
5
20
nA
20
0.3
0.7 V
2
35
80
75
180
100
250
160
400
250
630
35
100
12
pF
80
10 dB
100
MHz
■ Classification of hfe(3)
Type
BCW65A
Range
100-250
Marking
EA
BCW65B
160-400
EB
BCW65C
250-630
EC
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