MBR3045PTR Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.

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Fabricante

MBR3045PTR

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Thinki Semiconductor Co., Ltd. 

MBR3035PTR thru MBR30200PTR

®

Pb

MBR3035PTR thru MBR30200PTR

Pb Free Plating Product

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Features

Standard MBR matured technology with high reliablity

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters/Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-3PN/TO-3PB

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202 method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 6.5 gram approximately

TO-3PN/TO-3PB

Bottom Side Metal Heat Sink

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "PT"

Suffix "PTR"

Suffix "PTD" Suffix "PTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200

PTR PTR PTR PTR PTR PTR PTR PTR

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

90 100 150 200

Maximum RMS voltage

VRMS

24

31

35

42

63

70 105 140

Maximum DC blocking voltage

VDC

35

45

50

60

90 100 150 200

Maximum average forward rectified current

IF(AV)

30

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

IFRM

30

UNIT

V

V

V

A

A

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

200

A

Peak repetitive reverse surge Current (Note 1)

IRRM

2

1

A

Maximum instantaneous forward voltage (Note 2)

IF=15A, TJ=25℃

IF=15A, TJ=125℃

IF=30A, TJ=25℃

IF=30A, TJ=125℃

-

0.75

0.85

0.95 1.05

VF

0.60

0.65

0.75

0.92

-

V

0.82

-

-

1.02 1.10

0.73

-

-

0.98

-

Maximum reverse current @ rated VR TJ=25 ℃

TJ=125 ℃

1

IR

20

15

0.5

10

0.1

mA

Voltage rate of change,(Rated VR)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: 2.0μs Pulse Width, f=1.0KHz

dV/dt

RθJC

TJ

TSTG

10,000

1.4

- 55 to +150

- 55 to +150

V/μs

℃/W

℃

℃

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Rev.07C

© 2006 Thinki Semiconductor Co., Ltd.

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