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SNRVBD660CTT4G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
SNRVBD660CTT4G
ONSEMI
ON Semiconductor ONSEMI
SNRVBD660CTT4G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBRD620CT, NRVBD620VCT, SBRV620CT Series
TYPICAL CHARACTERISTICS
100
1000
70
100
TJ = 175°C
50
10
150°C
125°C
1.0
30
75°C
0.1
20
0.01
10
7.0
5.0
3.0
175°C
2.0 150°C
125°C
1.0
0.7
0.5
0.3
0.2
75°C
TC = 25°C
0.1
0
0.2 0.4 0.6 0.8
1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg
0.001
25°C
0.0001
0
10
20
30
40
50
60
70
VR, REVERSE VOLTAGE (VOLTS)
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
Figure 2. Typical Reverse Current,* Per Leg
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
IPK/IAV = 20
SINE
10
5 WAVE
SQUARE
dc WAVE
TJ = 150°C
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation, Per Leg
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3

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