VS-MBRB3030CTL-M3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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VS-MBRB3030CTL-M3 Datasheet PDF : 7 Pages
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VS-MBRB3030CTL-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
VFM (1)
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
TEST CONDITIONS
VALUES
15 A
30 A
TJ = 25 °C
0.47
0.55
15 A
30 A
TJ = 125 °C
0.34
0.45
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
VR = Rated VR
2
183
0.22
6.76
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
2840
8.0
Rated VR
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
per leg
junction to case
per package
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D2PAK (TO-263AB)
VALUES UNITS
- 55 to 150 °C
2.0
1.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB3030CTL
Revision: 09-Jan-18
2
Document Number: 96395
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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