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VS-MBRB3030CTL-M3 Datasheet PDF : 7 Pages
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VS-MBRB3030CTL-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
2
1
3
D2PAK (TO-263AB)
2
Common
cathode
1
3
Anode
1
Anode
2
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
30 V
VF at IF
0.34 V
IRM
183 mA at 125 °C
TJ max.
150 °C
EAS
Package
13 mJ
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
30
30
1100
0.34
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-MBRB3030CTL-M3
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 121 °C rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 3 A, L = 2.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
30
1100
360
13
3
UNITS
A
mJ
A
Revision: 09-Jan-18
1
Document Number: 96395
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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